International Rectifier (IR) (Symbol:IRF--NYSE) is a pioneer and world leader in advanced power management technology, from digital, analog and mixed-signal ICs to advanced circuit devices, power systems and components. The world's leading manufacturers of computers, appliances, automobiles, consumer electronics and defense systems rely on IR technology to drive the performance and efficiency of their products. Today, power management technology plays a more important role than ever in saving the world's dwindling energy reserves while tackling tough technology roadblocks.
- IR technology makes variable-speed operation practical and affordable for everything from conveyor belts to washing machines.
- We allow laptop computers to run longer.
- We're raising the bar for vehicle performance and fuel economy with electronic steering and a host of other advances.
- Digital, analog and mixed-signal ICs, advanced circuit devices, power systems and components
- We pioneered and hold key patents on technology that created the $5 billion power MOSFET industry.
- We focus completely on power chips and subsystems, and we create proprietary products that add more value to our customers' end products.
- Our high-volume dedicated fab sets the benchmark for cost in our industry.
- We invest aggressively in R&D, and we're generating a flow of highly-differentiated products targeted to high-growth applications.
- IR has the products, capacity, and cost structure to grow and build shareholder value.
- High performance analog, digital and mixed-signal ICs
- Advanced circuit devices
- Power systems
IR - Five Decades of Technology Leadership
International Rectifier was founded in Los Angeles in August 1947 to manufacture Selenium rectifiers. IR was one of the first companies to commercialize Germanium rectifiers in 1954, and the first to introduce commercial zener diodes and solar cells in 1958. IR's 50-year legacy of power semiconductor technology "firsts" include:
- The first silicon controlled rectifier (SCR) in 1959
- Development of the first epitaxial process in 1962 for producing the industry's most stable high voltage SCRs.
- One of the first suppliers of hi-reliability devices for space applications
- Introduction of the first power transistors and Darlington transistors to use glass passivation in 1974
- The first hexagonal-celled power MOSFET, trademarked HEXFET® in 1979
- Introduction of one of the world's first intelligent power ICs called the ChipSwitch® in 1983
- First patents issued for power MOSFET and IGBT products in 1983
- Introduced the world's first high voltage power IC in 1983
- The world's first SmartFET in 1993
- The world's first four mask MOSFET manufacturing process in 1996
- The world's first MOSFET and Schottky in a single package or FETKY® product in 1996
- The world's highest density and lowest RDS(on) self-aligned planar and trench MOSFETs in 1999
- FlipFET™ wafer-level packaging for portable applications in 2000
- iPOWIR™ integrated building blocks for DC-DC converters in 2001
- DirectFET®, a packaging technology breakthrough for high performance DC-DC converters in 2002
- iMOTION™ integrated design platform for variable speed motor drive in 2003
Advanced Circuits and Integrated Solutions
IR's latest product introductions provide a higher degree of value to customers seeking to optimize the performance of their power designs while simplifying and shortening their design cycles.
IR's iMOTION™ architecture offers engineers an alternative design platform for high performance digital motor drive design. It promises positive implications for today's low power AC drives, high power industrial AC drives, high performance servo applications as well as emerging aerospace fly-by-wire and automotive drive-by-wire systems.
Multi-chip modules, like the iPOWIR™- intelligent scalable building blocks, simplify power design and boost performance for the latest generation of low-voltage processors in single- and multi-phase topologies. IR's expertise in device matching and "short trace" layout deliver this optimized solution that combines multiple power semiconductors, ICs, and passive components into a single BGA package.
Power Management ICs
Thanks to the development of a unique high voltage (600 & 1200V), junction isolated BCDMOS fabrication process, IR produces one of the most capable lines of control, level shift, and gate drive ICs available on the market. These chips are used in designs requiring a high-current gate drive that needs to be level shifted from ground by more than a few volts. More sophisticated ICs are now in development that include PWM control and high speed digital control and interface circuits. IR also has an NMOS/CMPS power IC process for SmartFETs and Intelligent Power Switches. These components combine the functionality of a power MOSFET with analog and digital circuitry on a single chip. These two technologies have enabled key circuits in advanced high density power converters, motor controllers, and automotive electronics, now on the market. IR recently added Low Drop-Out voltage regulators and switching controllers to its product line to meet the rapidly evolving needs of DC-DC power management in the information technology equipment market.
IR HEXFET® Power MOSFET Technology
International Rectifier pioneered HEXFET power MOSFET technology, developing and introducing the first hexagonal topology MOSFETs in 1979. These developments were granted a broad patent just four years later, and since that time, most MOSFET manufacturers have licensed the designs and processes to enter this marketplace.
In December 1995, IR launched a new generation of MOSFET technology, based on an advanced four-mask process that utilizes innovative self-alignment features to improve manufacturing precision and increase yields. Using the simplified process, the company has manufactured MOSFETs with a low cycle time, compared with requirements for the six-step process in use by the rest of the power semiconductor industry. This process also allows junction depths up to 40 percent smaller than conventional processes, thereby greatly reducing the transistor junction resistance while increasing ruggedness. Leveraging its manufacturing expertise, IR developed and introduced in 1999 a stripe planar technology with a fully self-aligned manufacturing process that features highest density planar structure to provide extremely low on-resistance, excellent high-frequency operation, industry-best ruggedness and excellent manufacturing cast and cycle time.
In that same year, IR introduced a family of the industry's highest cell density and lowest RDS(on) trench MOSFETs. This technology was focused on the latest products for handsets, laptop computers and a variety of other portable electronic devices.
IR products exhibit the lowest MOSFET on-resistance available on the market for similar components in their class, enabling power conversion subsystem designs that exhibit unequaled efficiency. IR combines state-of-the-art silicon technology with innovative packaging technology. IR POWIRTAB™, Super-220™ and Super-247™ packages allow up to 20A more current per device in the same footprint than standard packages, increasing power density. Compatible with standard surface-mount soldering techniques, IR's FlipFET™ packaging technology offers a 100% silicon to footprint ratio with the same performance as a conventional package 3 times as big making it the ideal solution for portable devices such as portable phones or notebook PCs. IR's DirectFET® packaging revolutionizes thermal management in the footprint of a standard SO-8 by drawing heat away from the board through the top of the package. As a result, DirectFET MOSFETs can double current density while cutting thermal management cost in half in high current circuits that power next generation microprocessors.
IR manufactures a wide range of IGBTs (Insulated Gate Bipolar Transistors)- voltage controlled power transistors used to provide the basic output function in power conversion systems. They have become the preferred output solution in almost all high voltage, high current, moderate frequency applications. IR IGBTs offer higher current densities than equivalent high-voltage power MOSFETs, and are faster with superior drive and output characteristics than comparable power bipolar transistors. In 1999, IR introduced NPT technology for IGBT reducing power losses by 20% and significantly improving cost and manufacturability. In 2001, the family is expanding to include 600V devices.
IR's line of MERs include two capabilities: MOSFET- and IGBT-based photovoltaic relays and photovoltaic isolator products. The former are ideal solid-state relays for switching AC and DC loads and sensory signals from a few miliamps to several hundred watts in industrial controls, instrumentation, peripheral telecom devices, computer peripherals and office equipment. The latter offer single- and dual-channel, optically isolated outputs that can be used for directly driving the gates of discrete power MOSFETs and/or IGBTs, giving designers the flexibility of creating their own, custom-made solid-state relays capable of controlling loads well over 1,000 volts and 100 amps.
- Aerospace and Defense
- Class D Audio
- Computing and Communications
- Motion Control
- Plasma and Display